Method for improving strength of wiring

Technology for suppressing Electromigration damage and improving reliability

Overview

　As semiconductor devices are highly integrated, metal wirings used in semiconductor circuits are becoming hotter and denser. Then, electromigration (EM) damage due to metal fatigue becomes a problem. Conventionally, measures to increase EM strength have been taken by devising wiring structures such as lamination and installation of reservoirs. On the other hand, these measures require many processes and are costly.
　The present invention has developed a method to suppress EM damage only by performing wiring processing which is simpler and less costly than conventional methods. The present invention is a technology to improve reliability against EM damage by reducing current density flowing through wiring.

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Current Test Results: Drift Damage Rate by EM

Product Application

・semiconductor integrated circuit
・Electronic device wiring, etc.

IP Data

IP No.　 ： JP2024-190151　
Inventor ： SASAGAWA Kazuhiko
keyword ： Electromigration,　semiconductor,　Metal wiring,